BCR505_07 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR505
DC current gain h_FE = ƒ(I_C)
V_CE = 5 V (common emitter configuration)
Collector-emitter saturation voltage
V_CEsat = ƒ(I_C), I_C/I_B = 20
10 ³
0.5
V
10 ²
10 ¹
-40 °C
-25 °C
25 °C
10 ⁰
85 °C
125 °C
10
-1
10
-4
10 ^-3
10 ^-2
10 ^-1 A 10 ⁰
I_C
Input on Voltage Vi_(on) = ƒ(I_C)
V_CE = 0.3V (common emitter configuration)
0.4
0.35
0.3
0.25
-40 °C
0.2
-25 °C
25 °C
85 °C
0.15
125 °C
0.1
0.05
0
10
-3
10 ^-2
10 ^-1
A
10 ⁰
I_C
Input off voltage V_i(off) = ƒ(I_C)
V_CE = 5V (common emitter configuration)
10 ²
10 ¹
V
10 ¹
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 ⁰
V ^{-40 °C}
-25 °C
25 °C
85 °C
125 °C
10 ⁰
10
-1
10
-4
10 ^-3
10 ^-2
10 ^-1 A 10 ⁰
I_C
10
-1
10
-5
3
10 ^-4
10 ^-3
A
10 ^-2
IC
2007-07-31