BCR139 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR139...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
V_(BR)CEO 50
-
-
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
V_(BR)CBO 50
-
-
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
V_(BR)EBO 5
-
-
Collector-base cutoff current
V_CB = 40 V, I_E = 0
I _CBO
-
- 100
DC current gain¹⁾
I_C = 5 mA, V_CE = 5 V
h_FE
120 - 630
Collector-emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 0.5 mA
V_CEsat
-
-
0.3
Input off voltage
I_C = 100 µA, V_CE = 5 V
V_i(off)
0.4
-
0.8
Input on voltage
I_C = 2 mA, V_CE = 0.3 V
V_i(on)
0.5
-
1.1
Input resistor
R₁
15 22 29
1_{Pulse test: t < 300µs; D < 2%}
Unit
V
nA
-
V
kΩ
AC Characteristics
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
150
- MHz
C_cb
-
3
- pF
3
Sep-03-2003