BCR135E6327 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR135...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
V_(BR)CEO ⁵⁰
-
-V
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
V_(BR)CBO 50
-
-
Collector-base cutoff current
V_CB = 40 V, I_E = 0
Emitter-base cutoff current
V_EB = 6 V, I_C = 0
DC current gain¹⁾
I_C = 5 mA, V_CE = 5 V
Collector-emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 0.5 mA
I_CBO
-
- 100 nA
I_EBO
-
- 167 µA
h_FE
70
-
--
V_CEsat
-
-
0.3 V
Input off voltage
I_C = 100 µA, V_CE = 5 V
V_i(off)
0.5
-
1
Input on voltage
I_C = 2 mA, V_CE = 0.3 V
V_i(on)
0.5
-
1.4
Input resistor
Resistor ratio
R₁
R₁/R₂
7
10 13 kΩ
0.19 0.21 0.24 -
AC Characteristics
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
- 150 - MHz
C_cb
-
3
- pF
1_{Pulse test: t < 300µs; D < 2%}
3
2011-08-19