BCP68-25 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon AF Transistor

BCP68-25
DC current gain h_FE = ƒ(I_C)
V_CE = 1 V
Collector-emitter saturation voltage
I_C = ƒ(V_CEsat), h_FE = 10
10 ^{3 BCP 68}
h _FE ⁵
100 ˚C
10^{2 25 ˚C}
-50 ˚C
5
10 ¹
5
EHP00277
10 ^{4 BCP 68}
mA
Ι_C
10 ³
5
10 ²
5
10 ¹
5
100 ˚C
25 ˚C
-50 ˚C
EHP00278
10 ⁰
10 ⁰
10 ¹
10 ²
10³ mA 10⁴
Ι_C
Base-emitter saturation voltage
I_C = ƒ(V_BEsat), h_FE = 10
10 ⁰
0
0.2
0.4
0.6 V 0.8
V _CEsat
Collector cutoff current I_CBO = ƒ(T_A)
V_CBO = 25 V
10 ^{4 BCP 68}
mA
Ι_C
10 ³
5
10 ²
5
100 ˚C
25 ˚C
-50 ˚C
EHP00279
10 ^{5 BCP 68}
Ι _CBO ^nA
10 ⁴
10 ³
10 ²
EHP00276
max
typ
10 ¹
5
10 ¹
10 ⁰
0
0.2 0.4 0.6 0.8
V 1.2
V_{BE sat}
10 ⁰
0
3
50
100 ˚C 150
T_A
2008-10-10