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| BCP54 Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN medium power transistors | |||
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BCP54...BCP56
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BCP54
45
-
BCP55
60
-
V
-
-
BCP56
80
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IE = 0
BCP54
45
-
-
BCP55
60
-
-
BCP56
100 -
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 5 mA, VCE = 2 V
DC current gain 1)
IC = 150 mA, VCE = 2 V
V(BR)EBO 5
-
-
ICBO
-
- 100 nA
ICBO
-
-
20 µA
hFE
25
-
--
hFE
BCP54...56
hFE-grp.10
hFE-grp.16
40
- 250
63 100 160
100 160 250
DC current gain 1)
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
hFE
25
-
-
VCEsat
-
-
0.5 V
VBE(ON)
-
-
1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
-
100
- MHz
1) Pulse test: t â¤=300µs, D = 2%
3
Nov-29-2001
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