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BC817-16 Datasheet, PDF (3/11 Pages) Micro Commercial Components – NPN Small Signal Transistor 310mW
◁
BC817.../BC818...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC817...
IC = 10 mA, IB = 0 , BC818...
V(BR)CEO
45
-
-
25
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC817...
IC = 10 µA, IE = 0 , BC818...
V(BR)CBO
50
-
-
30
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
I CBO
-
-
0.1
-
-
50
Emitter-base cutoff current
VEB = 4 V, IC = 0
I EBO
-
- 100
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp.16
IC = 100 mA, VCE = 1 V, hFE-grp.25
IC = 100 mA, VCE = 1 V, hFE-grp.40
IC = 300 mA, VCE = 1 V, hFE-grp.162)
IC = 300 mA, VCE = 1 V, hFE-grp.252)
IC = 300 mA, VCE = 1 V, hFE-grp.402)
IC = 500 mA, VCE = 1 V, all hFE-grps.3)
hFE
100 160 250
160 250 400
250 350 630
60
-
-
100 -
-
170 -
-
40
-
-
Unit
V
-
V
µA
nA
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
1Pulse test: t < 300µs; D < 2%
2For all BC817 and BC818 subtypes
3For all BC817K and BC818K subtypes
VCEsat
-
-
0.7 V
VBEsat
-
-
1.2
3
2008-04-11
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