 English |
|
|
|
|
|
|
|
| BB679 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode | |||
| |||
| ◁ |
BB679...
Diode capacitance CT = (VR)
f = 1MHz
10 2
Normalized diode capacitance
C(TA)/C(25°C)= (TA); f = 1MHz
1.04
pF
10 1
10
0
10
0
10 1
V
10 2
VR
1V
2V
1.02
7V
15 V
25 V
28 V
1.01
1
0.99
0.98
0.97-40 -20
0
20 40 60 °C
100
TA
Temperature coefficient of the diode
capacitance TCc = (VR)
10 -3
1/°C
Reverse current IR = (TA)
VR = 28 V
10 -9
A
10 -10
10 -4
10 -11
10
-5
10
0
10 1
V
10 2
10 -12
-40 -20
0
20 40 60 °C
100
VR
TA
3
Oct-25-2002
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese