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| BAS3010B Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Medium Power AF Schottky Diode | |||
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BAS3010B...
Diode capacitance CT = Æ (VR)
f = 1MHz
120
pF
Reverse current IR = Æ (TA)
VR = Parameter
10 -2
A
10 -3
80
10 -4
60
10 -5
VR = 30 V
40
20 V
10 V
5V
10 -6
20
0
0
5
10
15
20
V
30
VR
10 -7
0
25
50
75 100 °C
150
TA
Reverse current IR = Æ(VR)
TA = Parameter
Forward Voltage VF = Æ (TA)
IF = Parameter
10 -2
A
10 -3
10 -4
10 -5
10 -6
10 -7
0
0.6
V
TA = 125 °C
TA = 85 °C
TA = 25 °C
5
10
15
20
V
30
VR
IF = 1 A
0.5
500 mA
100 mA
0.45
10 mA
0.4
0.35
0.3
0.25
0.2
0.15
0.1
-50 -25 0 25 50 75 100 °C 150
TA
3
2007-04-19
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