BAS170W_07 Datasheet, PDF (3/23 Pages) Infineon Technologies AG – Silicon Schottky Diode

Thermal Resistance
Parameter
Junction - soldering point¹⁾
BAS70, BAS70-07
BAS70-02L,
BAS70-02W
BAS70-04, BAS70-06
BAS70-04S/W, BAS70-06W
BAS70-05
BAS70-05W
BAS70-07W
BAS170W
Symbol
R_thJS
BAS70.../BAS170W
Value
Unit
K/W
≤ 310
≤ 130
≤ 170
≤ 410
≤ 210
≤ 510
≤ 240
≤ 145
≤ 190
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I_(BR) = 10 µA
Reverse current
V_R = 50 V
Forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 15 mA
Forward voltage matching²⁾
I_F = 10 mA
V_(BR)
I_R
V_F
∆ V_F
70
-
-V
-
-
0.1 _µA
mV
300 375 410
600 705 750
720 880 1000
-
-
20
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{∆VF is the difference between lowest and highest VF in a multiple diode component.}
3
2007-09-19