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| AUIRF7769L2TR Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Advanced Process Technology | |||
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Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
AUIRF7769L2TR
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
75
220
Max.
124
500
1.3
112
330
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
S
V TJ = 25°C, IS = 74A, VGS = 0V ï
ns TJ = 25°C, IF = 74A, VDD = 50V
nC dv/dt = 100A/µs ï
ï Surface mounted on 1 in.
square Cu board (still air).
ï Mounted to a PCB with
small clip heatsink (still air)
ï Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
ï Click on this section to link to the appropriate technical paper.
ï Click on this section to link to the DirectFET® Website.
ï Surface mounted on 1 in. square Cu board, steady state.
ï TC measured with thermocouple mounted to top (Drain) of part.
ï
Repetitive rating; pulse width limited by max. junction temperature.
ï Starting TJ = 25°C, L = 0.09mH, RG = 25ï, IAS = 74A.
ï Pulse width ï£ 400µs; duty cycle ï£ 2%.
ï Used double sided cooling, mounting pad with large heatsink.
ï Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
ï Rï± is measured at TJ of approximately 90°C.
3
2015-10-5
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