HYB25D128800CT Datasheet, PDF (25/28 Pages) Infineon Technologies AG – MEMORY SPECTRUM

Flash
Nomenclature TwinFlash™ Components
HYF 33 DS 512 80 0
A
T
C
(Example)
Temperature Range C
Package
T
= Commercial (0 °C – + 70 °C)
= TSOP I 48-P-1220-0.5
Process Technology
Product Variation
Organization
Memory Density
Memory Type
Supply and
I/O Voltage
Prefix
A
=
B
=
0
=
2
=
80
=
512 =
1G
=
DS =
33
=
31
=
HYF =
170 nm Process Technology
170 nm Process Technology (Enhanced Write Speed)
Standard Product (Tape & Reel Packing)
Stacked Die (Tape & Reel Packing)
x8
512 Mb
1024 Mb
Data SLC: TwinFlash Single-Level Cell (2 bit / cell)
3.3 V core and 3 V I/O
3.3 V core and 1.8 V I/O
Flash Memory Components
TwinFlash^™ Components
Density
512 Mb
Organization Page Size
Block Size
Core
I/O
Voltage Voltage
Write
Speed
Sales
Description
Ordering Code Package
3 V Normal HYF33DS512800ATC
64 M x 8 512 + 16 Bytes 16 K + 512 Bytes 3 V 3 V Enhanced HYF33DS512800BTC On request P-TSOPI-48
1.8 V Enhanced HYF31DS512800BTC
1 Gb
3 V Normal HYF33DS1G802ATC
128 M x 8 512 + 16 Bytes 16 K + 512 Bytes 3 V 3 V Enhanced HYF33DS1G802BTC On request P-TSOPI-48
1.8 V Enhanced HYF31DS1G802BTC
25