BGA711N7 Datasheet, PDF (25/43 Pages) Infineon Technologies AG – SiGe Bipolar 3G/3.5G/4G Single-Band LNA

BGA711N7
SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Electrical Characteristics
2.19
Measured Performance Band 1 Application Low Gain Mode vs. Temperature
T_A = 25 °C, V_CC = 2.8 V, V_GS = 0 V, V_EN = 2.8 V, f = 2140 MHz
Power Gain |S₂₁| = f (T_A)
Supply Current I_CC = f (T_A)
−5
−6
−7
−8
−9
−10
−11
−40 −20 0 20 40 60 80 100
T [°C]
A
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
−40 −20 0 20 40 60 80 100
T [°C]
A
Noise Figure NF = f (T_A)
Input Compression P1dB = f (T_A)
11
10
9
8
7
6
5
−40 −20 0 20 40 60 80 100
T [°C]
A
4
2
0
−2
−4
−6
−8
−10
−40 −20 0 20 40 60 80 100
T [°C]
A
Data Sheet
25
Revision 3.1, 2013-01-31