TLD1312EL_15 Datasheet, PDF (24/27 Pages) Infineon Technologies AG – 3 Channel High Side Current Source

TLD1312EL
Application Information
9
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
Vbat
BCM
PROFET
channel 1
I N1
IS1
SEN
internal
pow er
s upply
ESD
prot ect ion
logic
load current
sense
gate control
&
charge pump
open load
det ect ion
temperature
sensor
clamp for
inductive load
multi step
load current
limit at ion
VBB
OUT1
channel 2
I N2
IS2
control and protection circuit
equivalent to
channel 1
R GND
GND
OUT2
TAIL
BRAKE
Cmo d =2.2 µF
ISO -Pulse
protection circuit
depending on
re q u ire me n ts
CVS =4.7nF
10kΩ
VS
Internal
supply
EN
Thermal
protection
PWMI
Output
control
RPWMI CPWMI
RSET
IN_SET Current
adjust
BLaITsIXic^TMLBEasDic Driver
OUT3
OUT2
OUT1
GND
GND
** For EMI improvement, if required.
4.7nF**
10kΩ
CVS=4.7nF
VS
Internal
supply
EN
Thermal
protection
PWMI
Output
control
RSET
IN_SET Current
adjust
BLaITsIXic^TMLBEasDic Driver
OUT3
OUT2
OUT1
4.7nF** 4.7nF** 4.7nF**
GND
CVS =4.7nF
10kΩ
VS
Internal
supply
EN
Thermal
protection
PWMI
Output
control
RSET
IN_SET Current
adjust
BLaITsIXic^TMLBEasDic Driver
Rear Light assembly
OUT3
OUT2
OUT1
4.7nF** 4.7nF** 4.7nF**
GND
Figure 16 System Diagram internal PWM generation
Note: This is a very simplified example of an application circuit. In case of high ISO-pulse requirements a reverse
protection diode may be used for LED protection. The function must be verified in the real application.
9.1
Further Application Information
• For further information you may contact http://www.infineon.com/
Data Sheet
24
Rev. 1.1, 2015-03-19