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TLD2310EL_15 Datasheet, PDF (21/24 Pages) Infineon Technologies AG – 3 Channel High Side Current Source
TLD2310EL
Application Information
8
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBATT
Cmo d =2.2 µF
Micro-
controller
(e.g.
XC866)
ISO-Pulse protection circuit
depending on requirements
CVS =4.7nF
VS
Internal
supply
EN
Thermal
protection
Output
control
OUT3*
RSET
OUT2*
OUT1*
* Open Drain
IN_SET3
IN_SET2 Current
IN_SET1 adjust
BasiLcITLIXETMDBDasriciver
Figure 12 Application Diagram
OUT3
OUT2
OUT1
4.7nF** 4.7nF** 4.7nF**
GND
** For EMI improvement, if required.
Note: This is a very simplified example of an application circuit. In case of high ISO-pulse requirements a reverse
protection diode may be used for LED protection. The function must be verified in the real application.
8.1
Further Application Information
• For further information you may contact http://www.infineon.com/
Data Sheet
21
Rev. 1.1, 2015-03-24