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TLD1120EL_15 Datasheet, PDF (21/24 Pages) Infineon Technologies AG – 1 Channel High Side Current Source
TLD1120EL
Application Information
8
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBATT
Cmo d =2.2 µF
IS O- P u lse
protection circuit
depending on
r e q u ir e me n ts
10kΩ
CVS =4.7nF
VS
Internal
supply
EN
Thermal
protection
Output
control
OUT
4.7nF**
RSET
IN_SET Current
adjust
BasLiIcTIXLTEMDBDasriicver
GNDS GND
GND
** For EMI improvement, if required.
Figure 12 Application Diagram
Note: This is a very simplified example of an application circuit. In case of high ISO-pulse requirements a reverse
protection diode may be used for LED protection. The function must be verified in the real application.
8.1
Further Application Information
• For further information you may contact http://www.infineon.com/
Data Sheet
21
Rev. 1.1, 2015-03-19