SPW47N60C2 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPW47N60C2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
T_sold
-
-
0.3 K/W
-
-
62
-
- 3.33 W/K
-
- 260 °C
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V_(BR)DSS 600
-
V_GS=0V, I_D=0.25mA
Drain-source avalanche breakdown voltage
V_(BR)DS
-
700
V_GS=0V, I_D=20A
Gate threshold voltage, V_GS = V_DS
V_GS(th)
3.5
4.5
I_D =2.7mA
Zero gate voltage drain current
V_DS = 600 V, V_GS = 0 V, T_j = 25 °C
V_DS = 600 V, V_GS = 0 V, T_j = 150 °C
I_DSS
-
0.5
-
-
Gate-source leakage current
I_GSS
-
-
V_GS=20V, V_DS=0V
Drain-source on-state resistance
R_DS(on)
- 0.06
V_GS=10V, I_D=30A, T_j=25°C
Gate input resistance
f = 1 MHz, open drain
R_G
- 0.62
-V
-
5.5
µA
25
250
100 nA
0.07 Ω
-
1Repetitve _{avalanche causes additional power losses that can be calculated asPAV =EAR*f.}
Page 2
2002-10-07