SPW15N60C3 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPW15N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
V_DS = 480 V, I_D = 15 A, T_j = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
R_thJC
R_thJA
T_sold
Values
Unit
min. typ. max.
-
-
0.8 K/W
-
-
62
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V_(BR)DSS V_GS=0V, I_D=0.25mA 600
-
Drain-Source avalanche
V_(BR)DS V_GS=0V, I_D=15A
- 700
breakdown voltage
-V
-
Gate threshold voltage
V_GS(th) I_D=675µΑ, V_GS=V_DS 2.1
3
3.9
Zero gate voltage drain current I_DSS
V_DS=600V, V_GS=0V,
µA
T_j=25°C,
-
0.1
1
T_j=150°C
-
- 100
Gate-source leakage current
I _GSS
V_GS=30V, V_DS=0V
-
- 100 nA
Drain-source on-state resistance R_DS(on) V_GS=10V, I_D=9.4A,
Ω
T_j=25°C
- 0.25 0.28
T_j=150°C
- 0.68 -
Gate input resistance
R_G
f=1MHz, open Drain
-
1.23
-
Page 2
2003-09-17