SPI47N10L Datasheet, PDF (2/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
Thermal Characteristics
Parameter
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ¹⁾
R_thJC
R_thJA
R_thJA
SPI47N10L
SPP47N10L,SPB47N10L
Values
Unit
min. typ. max.
-
- 0.85 K/W
-
-
62
-
-
62
-
-
40
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V_(BR)DSS 100
-
-
V_GS=0V, I_D=2mA
Gate threshold voltage, V_GS = V_DS
I_D = 2 mA
Zero gate voltage drain current
V_DS=100V, V_GS=0V, T_j=25°C
V_DS=100V, V_GS=0V, T_j=150°C
Gate-source leakage current
V_GS(th)
1.2
1.6
2
I_DSS
I_GSS
-
0.1
1
-
-
100
-
10 100
V_GS=20V, V_DS=0V
Drain-source on-state resistance
V_GS=4.5V, I_D=33A
Drain-source on-state resistance
V_GS=10V, I_D=33A
R_DS(on)
-
25 40
R_DS(on)
-
18 26
Unit
V
µA
nA
m

1Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Page 2
2001-08-24