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| SPD04N60C2 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
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Final data
SPD04N60C2
SPU04N60C2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
Tsold
-
-
2.5 K/W
-
-
75
-
-
75
-
-
50
-
-
0.4 W/K
-
- 260 °C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
Drain-source avalanche breakdown voltage
VGS=0V, ID=4.5A
Gate threshold voltage, VGS = VDS
ID=200µA, Tj=25°C
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 150 °C
V(BR)DSS 600
-
V(BR)DS
-
700
VGS(th)
3.5
4.5
IDSS
-
0.5
-
-
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=2.8A, Tj=25°C
Gate input resistance
f = 1 MHz, open drain
IGSS
RDS(on)
RG
-
-
- 0.85
- 0.95
-V
-
5.5
µA
1
50
100 nA
0.95 â¦
-
1Repetitve avalanche causes additional power losses that can be calculated asPAV =EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-10-07
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