SMBTA42_07 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage

SMBTA42/MMBTA42
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO 300
-
-
I_C = 1 mA, I_B = 0
Collector-base breakdown voltage
V_(BR)CBO 300
-
-
I_C = 100 µA, I_E = 0
Emitter-base breakdown voltage
V_(BR)EBO 6
-
-
I_E = 100 µA, I_C = 0
Collector-base cutoff current
I _CBO
V_CB = 200 V, I_E = 0
-
-
0.1
V_CB = 200 V, I_E = 0 , T_A = 150 °C
-
-
20
Emitter-base cutoff current
I _EBO
-
- 100
V_EB = 5 V, I_C = 0
DC current gain¹⁾
h_FE
I_C = 1 mA, V_CE = 10 V
25
-
-
I_C = 10 mA, V_CE = 10 V
40
-
-
I_C = 30 mA, V_CE = 10 V
40
-
-
Collector-emitter saturation voltage¹⁾
V_CEsat
-
-
0.5
I_C = 20 mA, I_B = 2 mA
Base emitter saturation voltage¹⁾
V_BEsat
-
-
0.9
I_C = 20 mA, I_B = 2 mA
Unit
V
µA
nA
-
V
AC Characteristics
Transition frequency
I_C = 10 MHz, V_CE = 20 V, f = 100 MHz
Collector-base capacitance
V_CB = 20 V, f = 1 MHz
f_T
50 70
- MHz
C_cb
-
-
3 pF
1_{Pulse test: t < 300µs; D < 2%}
2
2007-04-19