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SMBT3906U Datasheet, PDF (2/8 Pages) Infineon Technologies AG – PNP Silicon Switching Transistor Array
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SMBT3906U
Electrical Characteristics at TA =25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
V(BR)CEO 40
-
-V
V(BR)CBO 40
-
-
V(BR)EBO 5
-
-
ICBO
-
-
50 nA
hFE
-
60
-
-
80
-
-
100
-
300
60
-
-
30
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
V
-
- 0.25
-
-
0.4
VBEsat
0.65 - 0.85
-
- 0.95
1) Pulse test: t < 300s; D < 2%
2
Nov-30-2001
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