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| SMBD914_07 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101 | |||
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SMBD914/MMBD914...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
100 -
-V
Reverse current
VR = 20 V
VR = 75 V
VR = 20 V, TA = 150 °C
VR = 75 V, TA = 150 °C
IR
µA
-
- 0.025
-
-
0.1
-
-
30
-
-
50
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 150 mA
VF
mV
-
-
715
-
-
855
-
- 1000
-
- 1200
-
- 1250
AC Characteristics
Diode capacitance
CT
VR = 0 V, f = 1 MHz
Reverse recovery time
trr
IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,
RL = 100 â¦
-
-
2 pF
-
-
4 ns
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ÎF
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,
Ri = 50â¦
Oscillograph: R = 50â¦, tr = 0.35ns, C ⤠1pF
EHN00019
2
2007-03-28
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