SIGC41T120R3E Datasheet, PDF (2/5 Pages) Infineon Technologies AG – positive temperature coefficient

SIGC41T120R3E
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, T_vj =25 C
DC collector current, limited by T_{vj max}
V_CE
I_C
1200
V
1)
A
Pulsed collector current, t_p limited by T_{vj max}
I_c,puls
105
A
Gate emitter voltage
V_GE
20
V
Junction temperature range
T_vj
Operating junction temperature
T_vj
Short circuit data ^{2 )} VGE = 15V, VCC = 900V, T_vj = 150°C
t_SC
-40 ... +175
°C
-40...+150
C
10
µs
Reverse bias safe operating area ^{2 )} (RBSOA)
1 ) _{depending on thermal properties of assembly}
I _{C , m a x} = 70A, V _{C E , m a x} = 1200V
T_vj  1 5 0 ° C
2 ) _{not subject to production test - verified by design/characterization}
Static Characteristics (tested on wafer), T_vj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
V_(BR)CES V_GE=0V , I_C= 1.5 mA 1200
V_CEsat
V_GE=15V, I_C=35A
1.4 1.7 2.1
V
V_GE(th)
I_C=1.5 mA , V_GE=V_CE 5.0 5.8 6.5
I_CES
V_CE=1200V , V_GE=0V
4.8 µA
I_GES
V_CE=0V , V_GE=20V
600 nA
r_G
6

Dynamic Characteristics (not subject to production test - verified by design / characterization),
T_vj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Output capacitance
Reverse transfer capacitance
C_ies
C_oes
C_res
V_CE=25V,
V_GE=0V,
f=1MHz
2530
132
pF
115
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7651M, L7651T, L7651E, Rev 2.3, 27.06.2014