SIGC156T60NR2C Datasheet, PDF (2/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

SIGC156T60NR2C
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, T_j=25 °C
DC collector current, limited by T_jmax
V_CE
I_C
600
V
1)
A
Pulsed collector current, t_p limited by T_jmax
I_cpuls
600
A
Gate emitter voltage
V_GE
±20
V
Operating junction and storage temperature
1 ) _{depending on thermal properties of assembly}
T_j, T_stg
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T_j=25 °C, unless otherwise specified:
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V_(BR)CES
V_GE=0V, I_C=5mA
600
V_CE(sat)
V_GE=15V, I_C=200A
1.7
2
2.5 V
V_GE(th)
I_C=4mA, V_GE=V_CE
4.5 5.5 6.5
I_CES
V_CE=600V, V_GE=0V
13.6 µA
I_GES
V_CE=0V, V_GE=20V
600 nA
R_Gint
5
Ω
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
C_{i s s}
C_{o s s}
C_{r s s}
V _{C E}= 2 5 V
V_GE=0V
f=1MHz
min.
-
-
-
Value
typ. max.
9000 -
tbd
-
800
-
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Conditions ¹⁾
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
t_r
t_d(off)
t_f
T_j=125°C
V_CC=300V
I_C=200A
V_GE=± 15V
R_G= 1 , 5Ω
min.
-
Value
typ. max.
180
-
Unit
ns
-
49
-
-
285
-
-
41
-
1) _{values also influenced by parasitic L- and C- in measurement and package.}
Edited by INFINEON Technologies AI PS DD HV3, L 7282-M, Edition 2, 28.11.2003