SIGC128T170R3E Datasheet, PDF (2/5 Pages) Infineon Technologies AG – positive temperature coefficient

SIGC128T170R3E
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, T_vj =25 C
DC collector current, limited by T_{vj max}
V_CE
I_C
1700
V
1)
A
Pulsed collector current, t_p limited by T_{vj max}
I_c,puls
300
A
Gate emitter voltage
V_GE
20
V
Junction temperature range
T_vj
Operating junction temperature
T_vj
Short circuit data ^{2 )} VGE = 15V, VCC = 1000V, T_vj = 150°C
t_SC
-40 ... +175
°C
-40...+150
C
10
µs
Reverse bias safe operating area ^{2 )} (RBSOA)
1 ) _{depending on thermal properties of assembly}
I _{C , m a x} = 200A, V _{C E , m a x} = 1700V
T_vj  1 5 0 ° C
2 ) _{not subject to production test - verified by design/characterization}
Static Characteristic (tested on wafer), T_vj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
3) _{Vcesat tested at lower current}
V_(BR)CES V_GE=0V , I_C= 3.5 mA 1700
V_CEsat3)
V_GE=15V, I_C=100A 1.6
2
2.4 V
V_GE(th)
I_C=4mA , V_GE=V_CE
5.2 5.8 6.4
I_CES
V_CE=1700V , V_GE=0V
5.6 µA
I_GES
V_CE=0V , V_GE=20V
600 nA
r_G
7.5

Dynamic Characteristic (not subject to production test - verified by design / characterization), T_vj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Reverse transfer capacitance
C_ies
C_res
V_CE=25V,
V_GE=0V,
f=1MHz
8815
pF
292
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7787M, L7787T, L7787E, Rev 2.2, 01.07.2014