SIGC04T60G Datasheet, PDF (2/4 Pages) Infineon Technologies AG – IGBT3 Chip

SIGC04T60G
MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T_j= 25 °C
DC collector current, limited by T_jmax
Pulsed collector current, t_p limited by T_jmax
Gate emitter voltage
Operating junction and storage temperature
SC data, V_GE = 15V, V_CC = 360V
Tvj = 150°C
Tvj = 25°C
1 ) _{depending on thermal properties of assembly}
Symbol
V_CE
I_C
I_cpuls
V_GE
T_j, T_stg
tp
Value
600
1)
18
±20
-40 ... +175
6
8
Unit
V
A
A
V
°C
µs
STATIC CHARACTERISTICS (tested on chip), T_j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V_(BR)CES
V_GE=0V , I_C= 2mA
600
V_CE(sat)
V_GE=15V, I_C=6A
1.1 1.5 1.9 V
V_GE(th)
I_C=90µA , V_GE=V_CE
5.0 5.8 6.5
I_CES
V_CE=600V , V_GE=0V
0.4 µA
I_GES
V_CE=0V , V_GE=20V
300 nA
R_Gint
none
Ω
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
C_{i s s}
C_{o s s}
C_{r s s}
V _{C E}= 2 5 V ,
V_GE=0V,
f=1MHz
min.
Value
typ. max.
368
28
11
Unit
pF
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Parameter
Symbol
Conditions
Value ²⁾
min. typ. max.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
T_j=125°C
12
t_r
V_CC=300V,
13
t_d(off)
I _C = 6A ,
V_GE= -15/15V,
120
t_f
R_G= 47Ω
130
Unit
ns
2) _{values also influenced by parasitic L- and C- in measurement and package.}
Edited by INFINEON Technologies AI PS DD CLS, L7501A, Edition 2, 27.01.2005