SIDC46D170H_04 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – Fast switching diode chip in EMCON 3 -Technology

SIDC46D170H
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
V_RRM
Continuous forward current limited by
T_jmax
I_F
Single pulse forward current
(depending on wire bond configuration)
I_FSM
Maximum repetitive forward current
limited by T_jmax
I _FRM
Operating junction and storage
temperature
T_j , T_stg
Condition
t_P = 10 ms sinusoidal
Value
Unit
1700
V
75
A
430
150
-55...+150 °C
Static Electrical Characteristics (tested on chip), T_j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min. Typ. max.
Reverse leakage current I _R
Cathode -Anode
V_Br
breakdown Voltage
V_R=1700V
I _R= 0 . 2 5 m A
T_j=25 °C
T_j=25°C
1700
27 µA
V
Forward voltage drop
V_F
I _F= 7 5 A
T_j=25 °C
1.8
V
Dynamic Electrical Characteristics, at T_j = 25 °C, unless otherwise specified, tested at component
Parameter
Symbol
Conditions
Value
Unit
min. Typ. max.
Peak recovery current
I_RRM1
I_RRM2
IF=75A
di/dt=920 A/µs
VR=900V
T_j = 25 °C
T_j = 125 °C
93
A
100
Reverse recovery charge Q_rr1
Q_rr2
IF=75A
di/dt=920 A/µs
VR=900V
T_j=25 °C
T_j=125°C
20.0
µC
31.7
Reverse recovery energy E _{rec 1}
E_rec2
IF=75A
di/dt=920 A/µs
VR=900V
T_j= 25°C
T_j=125°C
10.0
mJ
18.3
Edited by INFINEON Technologies AI DP PSD CLS, L 4471A, Edition 2, 2.11.2004