SIDC08D120H6 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – Fast switching diode chip in EMCON-Technology

Preliminary
SIDC08D120H6
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
V_RRM
Continuous forward current limited by
T_jmax
Single pulse forward current
(depending on wire bond configuration)
I_F
I_FSM
Maximum repetitive forward current
limited by T_jmax
Operating junction and storage
temperature
I _FRM
T_j , T_stg
Condition
t_P = 10 ms sinusoidal
Value
Unit
1200
V
10
A
tbd
20
-55...+150 °C
Static Electrical Characteristics (tested on chip), T_j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min. Typ. max.
Reverse leakage current I _R
Cathode -Anode
breakdown Voltage
V_Br
V_R=1200V
I _R= 0 . 8 m A
T_j=25 °C
T_j=25°C
1200
27 µA
V
Forward voltage drop
V_F
I _F= 1 0 A
T_j=25 °C
1.6
V
Dynamic Electrical Characteristics, at T_j = 25 °C, unless otherwise specified, tested at component
Parameter
Symbol
Conditions
Value
Unit
min. Typ. max.
Reverse recovery time
Peak recovery current
t_rr1
t_rr2
I_RRM1
I_RRM2
IF=10A
di/dt=600A/µs
VR=600V
IF=10A
di/dt=600A/µs
VR= 600V
T_j =25°C
T_j =125°C
T_j =25°C
T_j =125°C
tbd
ns
15
A
19
Reverse recovery charge Q_rr1
Q_rr2
IF=10A
di/dt=600A/µs
VR= 600V
T_j=25 °C
T_j=125°C
1.3
µC
2.5
Peak rate of fall of reverse di_{r r 1}/dt
recovery current
di_{r r 2}/dt
Softness
S1
S2
IF=10A
di/dt=600A/µs
VR= 600V
IF=10A
di/dt=600A/µs
VR= 600V
T_j= 25°C
T_j=125°C
T_j=25 °C
T_j=125°C
tbd
A/µs
tbd
1
Edited by INFINEON Technologies AI PS DD HV3, L 4352S, Edition 1, 8.01.2002