SIDC05D60SIC3 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

SIDC05D60SIC3
Maximum Ratings
Parameter
Symbol
Condition
Repetitive peak reverse voltage
V_RRM
Surge peak reverse voltage
V_RSM
Continuous forward current limited by
T_jmax
Single pulse forward current
(depending on wire bond configuration)
I_F
I_FSM
Maximum repetitive forward current
limited by T_jmax
Non repetitive peak forward current
I _FRM
I_FMAX
Operating junction and storage
temperature
T_j , T_stg
T_C =25° C, t_P =10 ms sinusoidal
T_C = 100° C, T_j= 1 5 0 ° C,
D=0.1
T_C =25° C, tp=10µs
Value
600
600
2
4.1
7.3
17
-55...+175
Unit
V
A
°C
Static Electrical Characteristics (tested on chip), T_j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min. Typ. max.
Reverse leakage current I _R
V _R= 6 0 0 V *
T_j=25 °C
7
100 µA
Forward voltage drop
V_F
I _F= 2 A
T_j=25 °C
1.6
2V
* blocking characteristic measured under protective gas atmosphere. Chip should not be used without being
embedded in pottant with breakdown field strength lower than 9 KV/mm at full blocking voltage.
Dynamic Electrical Characteristics, at T_j = 25 °C, unless otherwise specified, tested at component
Parameter
Total capacitive charge
Switching time
Symbol
Q_C
t_rr
Conditions
IF=2A
d i /d t = 2 0 0 A / µs
VR=400V
IF=2A
di/dt=200A/µs
VR= 400V
T_j = 150 °C
T_j = 150 °C
min.
Value
Unit
Typ. max.
4.6
nC
n.a.
ns
Total capacitance
C
IF=2A
di/dt=200A/µs
V_R=1V
T j =25°C
f=1MHz
V_R=300V
50
5.2
pF
V_R=600V
5
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004