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PZTA13 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors
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PZTA13, PZTA14
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, VBE = 0
V(BR)CES 30
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 30
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10
-
Collector cutoff current
VCB = 30 V, IE = 0
ICBO
-
-
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
Emitter cutoff current
VEB = 10 V, IC = 0
IEBO
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
hFE
PZTA13
PZTA14
5000 -
10000 -
-V
-
-
100 nA
10 µA
100 nA
-
-
-
IC = 100 mA, VCE = 5 V
PZTA13
PZTA14
10000 -
-
20000 -
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA
VCEsat
-
-
1.5 V
VBEsat
-
-
2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
125 -
- MHz
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-30-2001
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