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PZT3904 Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor
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PZT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector-emitter cutoff current
VCE = 30 V, -VBE = 0.5 V
Base-emitter cutoff current
VCE = 30 V, -VBE = 0.5
DC current gain 1)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
V(BR)CEO 40
-
-V
V(BR)CBO 60
-
-
V(BR)EBO 6
-
-
ICBO
-
-
50 nA
ICEV
-
-
50
IBEV
-
-
50
hFE
-
40
-
-
70
-
-
100 - 300
60
-
-
30
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
V
-
-
0.2
-
-
0.3
VBEsat
-
- 0.85
-
-
0.9
1) Pulse test: t ≤=300µs, D = 2%
2
Nov-30-2001
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