IPZ60R125P6_15 Datasheet, PDF (2/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

600VCoolMOS™P6PowerTransistor
IPZ60R125P6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•BestinclassRDS(on)/package
•Easytouse/driveduetodriversourcepinforbettercontrolofthegate
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
•4-pinkelvinsourceconcept
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.Computing,Server,TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
PG-TO247-4
Drain
Pin 1
Gate
Pin 4
Driver
Source
Pin 3
Power
Source
Pin 2
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
125
mΩ
Qg.typ
56
nC
ID,pulse
87
A
Eoss@400V
7.2
µJ
Body diode di/dt
250
A/µs
Type/OrderingCode
IPZ60R125P6
Package
PG-TO 247-4
Marking
6R125P6
RelatedLinks
see Appendix A
Final Data Sheet
2
Rev.2.0,2015-07-13