IPT020N10N3 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

1Description
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Extremelylowon-resistanceRDS(on)
•Highcurrentcapability
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC^1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2
mΩ
ID
300
A
OptiMOS^TM3Power-Transistor,100V
IPT020N10N3
HSOF
Tab
12345 ₆₇₈
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Type/OrderingCode
IPT020N10N3
Package
PG-HSOF-8-1
Marking
020N10N3
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
2
Rev.2.0,2014-02-17