IPS65R600E6_15 Datasheet, PDF (2/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™E6PowerTransistor
IPS65R600E6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™E6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSuperjunction
MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand
conductionlossesmakeswitchingapplicationsevenmoreefficient,more
compact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting,Server,
TelecomandUPS
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
600
mΩ
Qg.typ
23
nC
ID,pulse
18
A
Eoss@400V
2
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
IPS65R600E6
Package
PG-TO 251
Marking
65E6600
RelatedLinks
see Appendix A
Final Data Sheet
2
Rev.2.0,2015-04-23