IPP16CN10N Datasheet, PDF (2/12 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
Thermal resistance, junction -
R _thJA minimal footprint
-
ambient (TO220, TO262, TO263)
6 cm2 cooling area⁴⁾
-
Thermal resistance, junction -
ambient (TO252)
minimal footprint
-
6 cm2 cooling area⁴⁾
-
-
1.5 K/W
-
62
-
40
-
75
-
50
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
100
V _GS(th) V _DS=V _GS, I _D=61 µA
2
I _DSS
V _DS=80 V, V _GS=0 V,
T _j=25 °C
-
V _DS=80 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on)
V _GS=10 V, I _D=53 A,
(TO252)
-
V _GS=10 V, I _D=53 A,
-
(TO262)
V _GS=10 V, I _D=53 A,
-
(TO220, TO263)
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=53 A
33
-
-V
3
4
0.1
1 µA
10
100
1
100 nA
12.2
16 mΩ
12.4 16.2
12.7 16.5
1.2
-Ω
65
-S
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.01
page 2
2006-06-02