IPP096N03LG Datasheet, PDF (2/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
IPP096N03L G
IPB096N03L G
Value
Unit
42
W
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
SMD version, device on PCB
R _thJA minimal footprint
-
6 cm² cooling area⁴⁾
-
-
3.6 K/W
-
62
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
30
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=250 μA
1
-
2.2
Zero gate voltage drain current
I _DSS
V _DS=30 V, V _GS=0 V,
T _j=25 °C
-
0.1
1 μA
V _DS=30 V, V _GS=0 V,
T _j=125 °C
-
10
100
Gate-source leakage current
Drain-source on-state resistance⁵⁾
Gate resistance
I _GSS
V _GS=20 V, V _DS=0 V
R _DS(on) V _GS=4.5 V, I _D=30 A
V _GS=10 V, I _D=30 A
R_G
-
10
100 nA
-
11.3 14.1 m:
-
8.0
9.6
-
1.1
-:
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=30 A
26
53
-S
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain}
connection. PCB is vertical in still air.
5) _{Measured from drain tab to source pin}
Rev. 1.02
page 2
2007-08-29