IPG20N10S4L-35 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS™-T2 Power-Transistor

IPG20N10S4L-35
Parameter
Symbol
Conditions
Thermal characteristics²⁾
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
-
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
3.5 K/W
-
100
-
-
60
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D= 1 mA
100
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D= 16µA
1.1
Zero gate voltage drain current⁴⁾
I _DSS
V _DS=100 V, V _GS=0 V,
T _j=25 °C
-
V _DS=100 V, V _GS=0 V,
T _j=125 °C²⁾
-
Gate-source leakage current⁴⁾
I _GSS
V _GS=16 V, V _DS=0 V
-
Drain-source on-state resistance^{4) R} DS(on) ^V GS^{=4.5 V, I} D^{=10 A}
-
V _GS=10 V, I _D=17 A
-
-
1.6
0.01
1
-
38
29
-V
2.1
1 µA
100
100 nA
45 mW
35
Rev. 1.1
page 2
2012-05-15