IPG20N04S4-08 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPG20N04S4-08
Parameter
Symbol
Conditions
Thermal characteristics²⁾
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
-
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
2.3 K/W
-
100
-
-
60
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D= 1 mA
40
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D= 30µA
2.0
3.0
4.0
Zero gate voltage drain current⁴⁾
I _DSS
V _DS=40 V, V _GS=0 V,
T _j=25 °C
-
0.01
1 µA
V _DS=18 V, V _GS=0 V,
T _j=85 °C²⁾
-
Gate-source leakage current⁴⁾
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance^{4) R} DS(on) ^V GS^{=10 V, I} D^{=17 A}
-
1
100
-
100 nA
7.0
7.6 mW
Rev. 1.0
page 2
2010-10-05