IPD800N06NG_08 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
minimal footprint
6 cm² cooling area²⁾
IPD800N06N G
min.
Values
typ.
Unit
max.
-
-
3.2 K/W
-
-
75
-
-
50
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
60
V _GS(th) V _DS=V _GS, I _D=16 µA
2.1
I _DSS
V _DS=60 V, V _GS=0 V,
T _j=25 °C
-
V _DS=60 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=10 V, I _D=16 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=16 A
7
-
3
0.01
1
10
54
1
14
-V
4
1 µA
100
100 nA
80 mΩ
-Ω
-S
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for}
drain connection. PCB is vertical in still air.
Rev.1.3
page 2
2008-09-01