IPD50N03S4L-06_10 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

Parameter
IPD50N03S4L-06
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal resistance, junction - case R _thJC -
-
SMD version, device on PCB
R _thJA minimal footprint
-
6 cm² cooling area³⁾
-
-
2.7 K/W
-
62
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V _(BR)DSS V _GS=0V, I _D= 1mA
V _GS(th) V _DS=V _GS, I _D=20µA
I _DSS
V _DS=30V, V _GS=0V,
T _j=25°C
V _DS=30V, V _GS=0V,
T _j=125°C²⁾
I _GSS
V _GS=16V, V _DS=0V
R _DS(on) V _GS=4.5V, I _D=25A
V _GS= 10V, I _D=50 A
30
-
-V
1.0
1.5
2.2
-
0.1
1 µA
-
10
100
-
-
100 nA
-
6.9
9.0 mW
-
4.9
5.5
Rev. 1.1
page 2
2010-10-05