IPD122N10N3G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

IPD122N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R _thJC
R _thJA
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
1.6 K/W
-
-
75
-
-
50
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
100
V _GS(th) V _DS=V _GS, I _D=46 µA
2
I _DSS
V _DS=100 V, V _GS=0 V,
T _j=25 °C
-
V _DS=100 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=10 V, I _D=46 A
-
V _GS=6 V, I _D=23 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=46 A
29
-
2.7
0.1
10
1
10.5
13.1
1.1
57
-V
3.5
1 µA
100
100 nA
12.2 mΩ
23.1
-Ω
-S
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-07-09