IPD053N08N3G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

IPD053N08N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R _thJC
R _thJA
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
1 K/W
-
-
75
-
-
50
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
80
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=90 µA
2
Zero gate voltage drain current
I _DSS
V _DS=80 V, V _GS=0 V,
T _j=25 °C
-
V _DS=80 V, V _GS=0 V,
T _j=125 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on) V _GS=10 V, I _D=90 A
-
V _GS=6 V, I _D=45 A
-
Gate resistance
R_G
-
-
-V
2.8
3.5
0.1
1 µA
10
100
1
100 nA
4.4
5.3 mΩ
5.8
9.5
2.2
-Ω
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=90 A
56
111
-S
1)_{J-STD20 and JESD22}
2) _{See figure 3}
3) _{Device on 40 mm x 40 mm x 1.5 mm}
epoxy PCB FR4 with 6 cm² (one layer, 70
Rev. 1.0
page 2
2008-01-25