IPC100N04S4-02_15 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

IPC100N04S4-02
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC -
min.
Values
typ.
Unit
max.
-
-
1 K/W
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D= 1 mA
40
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D= 80µA
2.0
3.0
4.0
Zero gate voltage drain current
I _DSS
V _DS=40 V, V _GS=0 V,
T _j=25 °C
-
0.01
1 µA
V _DS=18 V, V _GS=0 V,
T _j=85 °C²⁾
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on) V _GS=10 V, I _D= 50A
-
1
20
-
100 nA
2.2
2.4 m
Rev. 1.0
page 2
2015-05-22