IPB180N04S4-H0 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPB180N04S4-H0
Parameter
Symbol
Conditions
Thermal characteristics²⁾
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
-
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
0.6 K/W
-
-
62
-
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V _(BR)DSS V _GS=0 V, I _D= 1 mA
40
V _GS(th) V _DS=V _GS, I _D=180 µA
2.0
I _DSS
V _DS=40 V, V _GS=0 V,
T _j=25 °C
-
V _DS=18 V, V _GS=0 V,
T _j=85 °C²⁾
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R_DS(on) V _GS=10 V, I _D=100 A
-
-
3.0
0.08
1
-
0.9
-V
4.0
1 µA
20
100 nA
1.1 mΩ
Rev. 1.0
page 2
2010-04-13