IPB027N10N3GATMA1 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – 3 Power-Transistor

IPB027N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
-85B=1<B5C9CD1>3 5 :E>3 D9? > 3 1C5
-85B=1<B5C9CD1>3 5
R _{`T@8</sub>
R <sub>`T@6}
:E>3 D9? > 1=2 95>D
=9>9=1<6? ? D@B9>D
 3 =^* 3 ? ? <9>7 1B51^+#
min.
Values
typ.
Unit
max.
%
%
(&- A'K

%
%
,(
Electrical characteristics, 1DT _V   T  E><5CC? D85BG9C5 C@53 96954
Static characteristics
 B19> C? EB3 5 2 B51;4? G> F? <D175
V _"7G#9HH V _=H  .  I ₉ =
)((
%
%J
!1D5 D8B5C8? <4 F? <D175
V <sub>=H"`T#</sub> V <sub>9H</sub>4V <sub>=H</sub> I <sub>9</sub>    V 
*
*&/
+&-
05B? 71D5 F? <D175 4B19> 3 EBB5>D
I <sub>9HH</sub>
V <sub>9H</sub>   .  V <sub>=H</sub>  . 
T <sub>V</sub>   T
%
(&)
) r6
V <sub>9H</sub>   .  V <sub>=H</sub>  . 
T <sub>V</sub>   T
%
)(
)((
!1D5 C? EB3 5 <51;175 3 EBB5>D
I <sub>=HH</sub>
V <sub>=H</sub>   .  V <sub>9H</sub>  .
%
)
)(( Z6
 B19> C? EB3 5 ? > CD1D5 B5C9CD1>3 5
R <sub>9H"[Z#</sub> V <sub>=H</sub>  .  I <sub>9</sub>   
%
*&+
*&/ Y"
V <sub>=H</sub>  .  I <sub>9</sub>   
%
*&0
,&-
!1D5 B5C9CD1>3 5
R<sub>=</sub>
%
)&1
%"
I^MZ_O[ZPaO`MZOQ
g _{R_}
gV _9Hg5*gI ₉gR _9H"[Z#YMd
I ₉   
1,
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%H
+# _{5F93 5 ? >   == H   == H  == 5@? HI )   +  G9D8  3 =}* _{? >5 <1I5B   V = D893 ; 3 ? @@5B1B51 6? B4B19>}
3 ? >>53 D9? > )   9CF5BD93 1<9> CD9<<19B
+ 5F  
@175