IPA032N06N3G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

IPA032N06N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC
min.
Values
typ.
Unit
max.
-
-
3.7 K/W
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V _(BR)DSS V _GS=0 V, I _D=1 mA
60
V _GS(th) V _DS=V _GS, I _D=118 µA
2
I _DSS
V _DS=60 V, V _GS=0 V,
T _j=25 °C
-
V _DS=60 V, V _GS=0 V,
T _j=125 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on) V _GS=10 V, I _D=80 A
-
Gate resistance
R_G
-
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=80 A
68
-
-V
3
4
0.1
1 µA
10
100
1
100 nA
2.6
3.2 mW
1.3
-W
135
-S
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2013-08-27