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| IGW30N60T_15 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology | |||
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IGW30N60T
TRENCHSTOP⢠Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Thermal resistance,
junction â ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
0.80
K/W
40
Electrical Characteristic, at Tj = 25 ï°C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=30A
Tj=25ï°C
Tj=175ï°C
IC=0.43mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25ï°C
Tj=175ï°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.9
4.9
-
-
-
16.7
-
Unit
max.
-V
2.05
-
5.7
µA
40
2000
100 nA
-S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
VCE=25V,
-
Coss
VGE=0V,
-
Crss
f=1MHz
-
QGate
VCC=480V, IC=30A
-
VGE=15V
Internal emitter inductance
LE
PG-TO-220-3-1
-
measured 5mm (0.197 in.) from case
PG-TO-247-3-21
-
Short circuit collector current1)
IC(SC)
VGE=15V,tSCï£5ïs
-
VCC = 400V,
Tj = 150ï°C
1630
108
50
167
7
13
275
- pF
-
-
- nC
- nH
-
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.8 19.05.2015
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