FF450R33TE3 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Medium voltage converters

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FF450R33TE3
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = -40°C
Tvj = 150°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES 
IC nom 
ICRM 
Ptot 
VGES 
3300
3300
450
900
4,45
+/-20
V
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V, VCE = 1800V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 3300 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 1800 V
VGE = ±15 V
RGon = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 450 A, VCE = 1800 V
VGE = ±15 V
RGon = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 1800 V
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 450 A, VCE = 1800 V
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 450 A, VCE = 1800 V, LS = 85 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3650 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 0,7 Ω
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 450 A, VCE = 1800 V, LS = 85 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2850 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 3,3 Ω
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 1800 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
min. typ. max.
VCE sat
2,55 3,10 V
3,00 3,45 V
3,15
V
VGEth 5,20 5,80 6,40 V
QG
12,5
µC
RGint
1,3
Ω
Cies
84,0
nF
Cres
2,00
nF
ICES
5,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
400 nA
0,68
µs
0,66
µs
0,66
µs
0,35
µs
0,46
µs
0,46
µs
1,70
µs
1,85
µs
1,90
µs
0,13
µs
0,24
µs
0,27
µs
500
mJ
765
mJ
845
mJ
415
mJ
600
mJ
660
mJ
1700
A
28,4 K/kW
RthCH
24,9
K/kW
Tvj op -40
150 °C
preparedby:MW
approvedby:DTS
dateofpublication:2016-05-18
revision:V2.0
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