FD200R12KE3P Datasheet, PDF (2/10 Pages) Infineon Technologies AG – 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FD200R12KE3P
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TH = 65°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES 
IC nom 
ICRM 
VGES 
1200
200
400
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 8,00 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V, di/dt = 3000 A/µs
RGon = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V, du/dt = 4000 V/µs
RGoff = 3,6 Ω
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
proIGBT/perIGBT
validwithIFXpre-appliedthermalinterfacematerial
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
min. typ. max.
VCE sat
1,70 2,15 V
2,00
V
VGEth 5,00 5,80 6,50 V
QG
RGint
1,90
µC
3,8
Ω
Cies
14,0
nF
Cres
0,50
nF
ICES
5,0 mA
IGES
400 nA
td on
0,25
µs
0,30
µs
tr
0,09
µs
0,10
µs
td off
0,55
µs
0,65
µs
tf
0,13
µs
0,18
µs
10,0
mJ
Eon
15,0
mJ
24,0
mJ
Eoff
35,0
mJ
ISC
RthJH
800
A
0,153 K/W
Tvj op -40
125 °C
preparedby:AKB
approvedby:MK
dateofpublication:2016-04-04
revision:V2.0
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