CGY41_11 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – HiRel L- and S-Band GaAs General Purpose Amplifier

CGY41
Maximum ratings
Drain-voltage
Gate-voltage
Drain-gate voltage
RF Input power ¹⁾
Channel temperature
Storage temperature range
2)
Total power dissipation (T_S < 82°C)
Symbol
V
D
V
G
V
DG
P_RFIN
T
Ch
T
stg
P
tot
Value
5.5
-4 ... 0.5
9.5
16
175
-55...+175
440
Unit
V
V
V
dBm
°C
°C
mW
Thermal resistance
2)
Channel-soldering point
R
thChS
160
K/W
Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ V_D > 4.5 V derating required.
2) Ts is measured on the source lead at the soldering point to the PCB.
IFAG IMM RPD D
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